US Patent Issued to SAMSUNG ELECTRONICS on July 8 for "Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods" (American, South Korean Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,665, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods" was invented by Seungchan Yun (Waterford, N.Y.), Inchan Hwang (Schenectady, N.Y.), Gunho Jo (Albany, N.Y.), Jeonghyuk Yim (Halfmoon, N.Y.), Byounghak Hong (Latham, N.Y.), Kang-ill Seo (Latham, N.Y.), Ming He (San Jose, Calif.), JaeHyun Park (Hwaseong-si, South Korea), Mehdi Saremi (Danville, Calif.), Rebecca Park (Mountain View, Calif.), Harsono Simka (Saratoga, Calif.) and Daewon Ha (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & T...