ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,625, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).
"Semiconductor memory device and method for fabricating the same" was invented by Min Hee Cho (Suwon-si, South Korea), Dong Il Bae (Seongnam-si, South Korea), Won Sok Lee (Suwon-si, South Korea) and Yong Seok Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a cell area and a peripheral area, a base insulating layer including opposed first front and rear surfaces in the cell area, a first semiconductor substrate including opposed second front and rear surfaces in the peripheral area, an active pattern on th...