ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,615, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device including vertical channel pattern surrounded by protection pattern" was invented by Choasub Kim (Hwaseong-si, South Korea), Dongmin Kyeon (Seongnam-si, South Korea), Shinyoung Kim (Yongin-si, South Korea), Hayan Park (Hwaseong-si, South Korea), Youngsun Cho (Seongnam-si, South Korea) and Changhyun Hur (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a memory cell region positioned on a substrate and comprising a real memory cell region and a dummy memory cell region; and a connection ...