ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,661, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method of fabricating the same" was invented by Kyungsoo Kim (Hwaseong-si, South Korea), Jinyoung Park (Anyang-si, South Korea) and Kyen-Hee Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active pattern on a substrate, a source/drain pattern on the active pattern, a gate electrode on a channel pattern connected to the source/drain pattern, an active contact on the source/drain pattern, a first lower interconnection line on the active contact, a second lower interconnection li...