ALEXANDRIA, Va., July 9 -- United States Patent no. 12,350,026, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Photoplethysmography sensor and semiconductor device including the same" was invented by Sung Jin Jung (Hwaseong-si, South Korea), Long Yan (Hwaseong-si, South Korea), Seoung Jae Yoo (Seongnam-si, South Korea) and Yun-Cheol Han (Yongin-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A photoplethysmography sensor that includes a photoelectric conversion element including a first terminal and a second terminal, and that receives light reflected from a blood vessel and generates a current corresponding to the received light, a current-to-volta...