ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,920, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Method of forming optical proximity correction model and method of fabricating semiconductor device using the same" was invented by Sang Chul Yeo (Osan-si, South Korea), Min-Cheol Kang (Hwaseong-si, South Korea) and Sooryong Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a method of forming an optical proximity correction (OPC) model and/or a method of fabricating a semiconductor device using the same. The method of forming the OPC model may include obtaining a scanning electron microscope (SEM) image, which is an ave...