ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,697, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Integrated circuit device and method of manufacturing the same" was invented by Changseop Yoon (Suwon-si, South Korea) and Jong Shik Yoon (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a fin-type active area extending in a first horizontal direction on a substrate, a channel area on the fin-type active area, a gate line surrounding the channel area on the fin-type active area and extending in a second horizontal direction crossing the first horizontal direction, an insulating spacer structure c...