US Patent Issued to SAMSUNG ELECTRONICS on July 8 for "High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,640, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same" was invented by Jeonggyu Song (Seongnam-si, South Korea), Younsoo Kim (Yongin-si, South Korea), Jooho Lee (Hwaseong-si, South Korea) and Narae Han (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper ele...