US Patent Issued to SAMSUNG ELECTRONICS on July 8 for "Field effect transistor including channels having a hollow closed cross-sectional structure and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,668, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Field effect transistor including channels having a hollow closed cross-sectional structure and method of manufacturing the same" was invented by Minsu Seol (Seoul, South Korea), Minhyun Lee (Suwon-si, South Korea), Junyoung Kwon (Seoul, South Korea), Hyeonjin Shin (Suwon-si, South Korea) and Minseok Yoo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from ...