ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,643, issued on July 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Capacitor, memory device including the capacitor" was invented by Changsoo Lee (Seoul, South Korea), Jinhong Kim (Seoul, South Korea), Yongsung Kim (Suwon-si, South Korea), Jiwoon Park (Seoul, South Korea), Jooho Lee (Hwaseong-si, South Korea) and Yong-Hee Cho (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnO2 doped with an impurity; a dielectric layer on ...