US Patent Issued to SAMSUNG ELECTRONICS on July 29 for "Vertical non-volatile memory devices having a multi-stack structure with enhanced photolithographic alignment characteristics" (South Korean Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,286, issued on July 29, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Vertical non-volatile memory devices having a multi-stack structure with enhanced photolithographic alignment characteristics" was invented by Giyong Chung (Seoul, South Korea), Youngjin Kwon (Gwacheon-si, South Korea) and Dongseog Eun (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical-type nonvolatile memory device has a multi-stack structure with reduced susceptibility to mis-alignment of a vertical channel layer. This nonvolatile memory device includes: (i) a main chip area including a cell area and an extension area arr...