ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,411, issued on July 29, was assigned to Samsung Electronics Co. LTD. (Suwon-si, South Korea).

"Three-dimensional flash memory for improving integration and operation method thereof" was invented by Yun Heub Song (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a three-dimensional flash memory, to which a GSL-removed structure is applied, and an operating method thereof.According to an embodiment, the three-dimensional flash memory comprises: a plurality of word lines which are formed extending in a horizontal direction on a substrate and are sequentially stacked; and a plurality of strings passing through the pluralit...