ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,623, issued on July 29, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Stacked semiconductor device architecture" was invented by Saehan Park (Clifton Park, N.Y.) and Seungyoung Lee (Clifton Park, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor architecture having a metal-oxide-semiconductor field-effect transistor (MOSFET) cell, the semiconductor architecture including a first semiconductor device included in the MOSFET cell, a second semiconductor device included in the MOSFET cell, the second semiconductor device being provided above the first semiconductor device, a first power rail configu...