US Patent Issued to SAMSUNG ELECTRONICS on July 29 for "Integrated circuit devices including a vertical field-effect transistor and methods of forming the same" (New York Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,352, issued on July 29, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Integrated circuit devices including a vertical field-effect transistor and methods of forming the same" was invented by Byounghak Hong (Albany, N.Y.) and Seunghyun Song (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit devices and methods of forming the same are provided. Integrated circuit devices may include a first active region including a first vertical field effect transistor (VFET), a second active region including a second VFET, and a diffusion break between the first active region and the second active region on a su...