US Patent Issued to SAMSUNG ELECTRONICS on July 29 for "Bit line sense amplifier and bit line sensing method of semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,373, issued on July 29, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Bit line sense amplifier and bit line sensing method of semiconductor memory device" was invented by Chaehwan Park (Suwon-si, South Korea) and Keewon Kwon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bit line sense amplifier includes a differential amplifier configured to receive an input signal from a bit line through an input terminal of the bit line sense amplifier and output a first signal to a first node of the bit line sense amplifier, a sensing inverter configured to receive the first signal and output a second signal to a second no...