US Patent Issued to SAMSUNG ELECTRONICS on July 22 for "SRAM cell configured to perform multiply-accumulate (MAC) operation on multi-bit data based on charge sharing and method of operating the same" (South Korean Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,920, issued on July 22, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"SRAM cell configured to perform multiply-accumulate (MAC) operation on multi-bit data based on charge sharing and method of operating the same" was invented by Jongsun Park (Seoul, South Korea), Kyeongho Lee (Seoul, South Korea) and Hyunjun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SRAM cell includes a first pass gate transistor connected with a first word-line and a local bit-line, a first inverter that includes an output terminal connected with the first pass gate transistor and an input terminal, a second inverter that...