US Patent Issued to SAMSUNG ELECTRONICS on July 22 for "Methods of fabricating semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,314, issued on July 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Methods of fabricating semiconductor device" was invented by Seung-Heon Lee (Seoul, South Korea), Munjun Kim (Suwon-si, South Korea) and ByeongJu Bae (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define active regions, forming a conductive layer on the active regions, forming first mask patterns intersecting the active regions on the conductive layer, etching the conductive layer using the first mask patterns as etch mask...