US Patent Issued to SAMSUNG ELECTRONICS on July 22 for "Integrated circuit including transistors and a method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,361, issued on July 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Integrated circuit including transistors and a method of manufacturing the same" was invented by Sangwook Kim (Seongnam-si, South Korea), Yunseong Lee (Osan-si, South Korea), Sanghyun Jo (Seoul, South Korea) and Jinseong Heo (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between ...