US Patent Issued to SAMSUNG ELECTRONICS on July 15 for "Semiconductor device having a through electrode penetrating mold layers formed in an extension area" (South Korean Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,897, issued on July 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Semiconductor device having a through electrode penetrating mold layers formed in an extension area" was invented by Kihyun Kim (Suwon-si, South Korea) and Youngho Kwon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including cell array, extension, and through electrode areas; a memory stack on the substrate and including first gate electrodes, insulating layers, and mold layers, the first gate electrodes and the insulating layers being sequentially stacked, and the mold layers including an insulatin...