ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,891, issued on July 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device and method of fabricating the same" was invented by Jiseok Hong (Suwon-si, South Korea), Sung-Jin Yeo (Yongin-si, South Korea) and Yoongi Hong (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including cell and core regions respectively having first and second active patterns having respective, opposing sidewall surfaces at least partially defining a trench therebetween, and a boundary region between the cell and core regions, a device isolation layer on the boundary regi...