ALEXANDRIA, Va., July 16 -- United States Patent no. 12,360,675, issued on July 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Memory device" was invented by Seungjun Shin (Suwon-si, South Korea), Yeongwoo Kang (Suwon-si, South Korea), DongHyeok Cho (Suwon-si, South Korea) and Younghun Seo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a memory device which includes a first memory cell that is electrically connected with a first word line and a first bit line, a first bit line sense amplifier circuit that is electrically connected with the first bit line, a first local sense amplifier circuit that is electrically connected with the first bit line sense am...