US Patent Issued to SAMSUNG ELECTRONICS on July 15 for "Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked device" (New York Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,018, issued on July 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Yongin-si, South Korea).

"Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked device" was invented by Inchan Hwang (Schenectady, N.Y.), Jaejik Baek (Watervliet, N.Y.), Byounghak Hong (Albany, N.Y.), Saehan Park (Clifton Park, N.Y.) and Kang-ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first semiconductor device and a second semiconductor device adjacent to the first semiconductor device. Each of the first and second semiconductor devices includes a lower transistor and an upper transistor on ...