ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,007, issued on July 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).
"Integrated circuit device including insulating guide film between adjacent conductive patterns" was invented by Yeonggil Kim (Hwaseong-si, South Korea), Seonbae Kim (Hwaseong-si, South Korea), Woojin Lee (Hwaseong-si, South Korea) and Jayeong Heo (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device including a fin-type active region on a substrate and a gate line on the fin-type active and having a first uppermost surface at a first vertical level, an insulating spacer covering a sidewall of the gate...