US Patent Issued to SAMSUNG ELECTRONICS on July 1 for "Vertical memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,360, issued on July 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Vertical memory device" was invented by Jun Hyoung Kim (Seoul, South Korea), Kwang Soo Kim (Hwaseong-si, South Korea), Seok Cheon Baek (Hwaseong-si, South Korea) and Geun Won Lim (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical memory device includes a substrate having a peripheral circuit structure, first gate patterns having first gate pad regions stacked vertically from the substrate, vertical channel structures penetrating the first gate patterns, first gate contact structures each extending vertically to a corresponding first gate...