US Patent Issued to SAMSUNG ELECTRONICS on July 1 for "Semiconductor devices including a through-hole electrode" (South Korean Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,747, issued on July 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor devices including a through-hole electrode" was invented by Jimin Choi (Suwon-si, South Korea), Jongmin Lee (Suwon-si, South Korea), Yeonjin Lee (Suwon-si, South Korea), Jeonil Lee (Suwon-si, South Korea), Juik Lee (Suwon-si, South Korea) and Minjung Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an etch stop layer on the substrate, a through-hole electrode extending through the substrate and the etch stop layer in a vertical direction substantially perpendicular to an upp...