ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,781, issued on July 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).
"Semiconductor devices having penetration vias" was invented by Hakseung Lee (Seoul, South Korea), Jinnam Kim (Anyang-si, South Korea), Hyoukyung Cho (Seoul, South Korea), Taeseong Kim (Suwon-si, South Korea) and Kwangjin Moon (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a first semiconductor substrate having a first surface and a second surface opposite from each other, a first circuit layer provided on the first surface of the first semiconductor substrate, a connection pad provided on the second surface ...