US Patent Issued to SAMSUNG ELECTRONICS on July 1 for "Plasma etching apparatus, plasma etching method using the same, and semiconductor fabrication method using the same" (South Korean Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,657, issued on July 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Plasma etching apparatus, plasma etching method using the same, and semiconductor fabrication method using the same" was invented by Jongchul Park (Seoul, South Korea) and Sanghyun Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma etching apparatus includes a chuck configured to support a wafer, and a voltage application unit. The voltage application unit includes a first voltage application part configured to apply a first voltage to the wafer on the chuck, and a second voltage application part configured to apply a secon...