ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,499, issued on July 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Page buffer circuit and memory device including the same" was invented by Yongsung Cho (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array, and a page buffer circuit connected to the memory cell array through a plurality of bit lines, including a plurality of page buffers arranged in correspondence with the bit lines and each of which includes a sensing node. The plurality of page buffers include a first page buffer, and the first page buffer includes: a first sensing node configured to sen...