US Patent Issued to SAMSUNG ELECTRONICS on July 1 for "Method of fabricating a semiconductor device including source/drain contacts having different heights and different widths" (South Korean Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,437, issued on July 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of fabricating a semiconductor device including source/drain contacts having different heights and different widths" was invented by Byungeun Yun (Hwaseong-si, South Korea), Jun-Gu Kang (Hwaseong-si, South Korea), Dong-Il Park (Hwaseong-si, South Korea) and Yongsang Jeong (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device includes: providing a substrate including a first and second region; forming a first gate dielectric pattern and a first gate electrode on the first region; forming a ...