US Patent Issued to SAMSUNG ELECTRONICS on July 1 for "Gate structures and semiconductor devices including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,443, issued on July 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Gate structures and semiconductor devices including the same" was invented by Taejin Park (Yongin-si, South Korea), Jangeun Lee (Hwaseong-si, South Korea) and Huijung Kim (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gate structure may include a first gate electrode extending in a first direction, a second gate electrode on a portion of the first gate electrode, a gate mask on the first and second gate electrodes, and a gate insulation pattern on a lower surface and a sidewall of the first gate electrode and sidewalls of the second gate el...