US Patent Issued to SAMSUNG ELECTRONICS on Jan. 28 for "Three-dimensional semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,315, issued on Jan. 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional semiconductor memory device" was invented by Byungjin Lee (Suwon-si, South Korea), Dong-Sik Lee (Suwon-si, South Korea) and Joon-Sung Lim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a stack structure that includes a plurality of dielectric layers spaced apart from each other on a substrate, a plurality of electrodes interposed between the plurality of dielectric layers, and a plurality of stopper layers interposed between the plurality of diele...