US Patent Issued to SAMSUNG ELECTRONICS on Jan. 28 for "Semiconductor memory device comprising magnetic tunnel junctions" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,322, issued on Jan. 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor memory device comprising magnetic tunnel junctions" was invented by Kyung Hwan Lee (Seoul, South Korea), Kwang Seok Kim (Seoul, South Korea), Yong Seok Kim (Suwon-si, South Korea), Il Gweon Kim (Hwaseong-si, South Korea) and Kil Ho Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a se...