US Patent Issued to SAMSUNG ELECTRONICS on Jan. 28 for "Semiconductor device including gate contact structure formed from gate structure" (New York, Virginia Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,837, issued on Jan. 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including gate contact structure formed from gate structure" was invented by Myunghoon Jung (Clifton Park, N.Y.), Jaehong Lee (Latham, N.Y.), Seungchan Yun (Waterford, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device which may include: a channel structure; a gate structure on the channel structure; and a gate contact structure on the gate structure, the gate contact structure configured to receive a gate input signal, wherein the gate contact structure is a porti...