ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,210,290, issued on Jan. 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Optical proximity correction method and method of fabricating a semiconductor device using the same" was invented by Pilsoo Kang (Hwaseong-si, South Korea), Sangwook Kim (Yongin-si, South Korea) and Sanghun Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes performing an optical proximity correction (OPC) operation on a layout and forming a photoresist pattern on a substrate using a photomask that is manufactured with the layout corrected by the OPC operation. The OPC operation inc...