ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,745, issued on Jan. 28, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Methods of fabricating semiconductor devices" was invented by Uihyoung Lee (Hwaseong-si, South Korea), Honyun Park (Hwaseong-si, South Korea), Jongseok Lee (Hwaseong-si, South Korea), Sewan Kim (Suwon-si, South Korea) and Taesung Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a fi...