US Patent Issued to SAMSUNG ELECTRONICS on Jan. 28 for "Memory device, operating method of the memory device, and memory system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,210,777, issued on Jan. 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device, operating method of the memory device, and memory system including the same" was invented by Kyungmin Kim (Suwon-si, South Korea) and Byongmo Moon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a memory device includes a data sampler configured to sample a data signal based on a write data strobe signal, a measuring circuit configured to measure a temperature-based delay variation and a voltage-based delay variation of a transfer path of the write data strobe signal, a storage circuit configured to...