US Patent Issued to SAMSUNG ELECTRONICS on Jan. 28 for "Integrated circuit devices including a parameter measuring structure and methods of forming the same" (South Korean, American Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,760, issued on Jan. 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Integrated circuit devices including a parameter measuring structure and methods of forming the same" was invented by Byounghak Hong (Albany, N.Y.), Wookhyun Kwon (Hwaseong-si, South Korea), Hyoeun Park (Cohoes, N.Y.) and Kangill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit devices may include a cell transistor and a parameter measuring structure (e.g., a resistance measuring structure). The cell transistor may be on a first surface of a substrate structure, which is opposite a second surface thereof. The parameter me...