ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,672, issued on Jan. 28, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Apparatus and method for plasma etching" was invented by Jongwoo Sun (Hwaseong-si, South Korea), Kyohyeok Kim (Seoul, South Korea), Taehwa Kim (Hwaseong-si, South Korea), Haejoong Park (Yongin-si, South Korea) and Jewoo Han (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from an...