ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,477, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor memory device" was invented by Kiseok Lee (Suwon-si, South Korea), Junhyeok Ahn (Suwon-si, South Korea), Keunnam Kim (Suwon-si, South Korea), Chan-Sic Yoon (Suwon-si, South Korea) and Myeong-Dong Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a semiconductor substrate; a device isolation layer defining an active portion in the semiconductor substrate; a bit line structure intersecting the active portion on the semiconductor substrate; a first conductive pad between the bit line...