ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,521, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor devices" was invented by Kyungbin Chun (Suwon-si, South Korea), Jinbum Kim (Suwon-si, South Korea), Gyeom Kim (Suwon-si, South Korea), Dahye Kim (Suwon-si, South Korea) and Youngkwang Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including channels spaced apart from each other on a substrate; a gate structure extending on the substrate, the gate structure surrounding lower and upper surfaces and sidewalls of each of the channels; and a source/drain layer on the substrate, the source/drain lay...