US Patent Issued to SAMSUNG ELECTRONICS on Jan. 27 for "Semiconductor device including dielectric layer and method of forming the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,499, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including dielectric layer and method of forming the same" was invented by Eunsun Kim (Suwon-si, South Korea), Boeun Park (Hwaseong-si, South Korea), Cheolhyun An (Seongnam-si, South Korea), Hyungjun Kim (Suwon-si, South Korea), Younggeun Park (Suwon-si, South Korea) and Jeongil Bang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a first electrode on a single-crystal structure. A dielectric layer is formed on the first electrode. A second electrode is fo...