US Patent Issued to SAMSUNG ELECTRONICS on Jan. 27 for "Semiconductor device and memory system including multiple conductive layers" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,481, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device and memory system including multiple conductive layers" was invented by Younggul Song (Hwaseong-si, South Korea), Junyeong Seok (Seoul, South Korea), Eun Chu Oh (Hwaseong-si, South Korea), Byungchul Jang (Suwon-si, South Korea) and Joonsung Lim (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device. The semiconductor device includes: a plurality of insulating layers and a plurality of gate electrodes alternately arranged in a first direction; and a plurality of channel structures pas...