ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,517, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Gyeonggi-do, South Korea).
"Semiconductor device" was invented by Sanggil Lee (Ansan-si, South Korea), Seokhoon Kim (Suwon-si, South Korea), Sungmin Kim (Incheon, South Korea), Jungtaek Kim (Yongin-si, South Korea), Pankwi Park (Incheon, South Korea), Dongsuk Shin (Suwon-si, South Korea), Namkyu Cho (Yongin-si, South Korea), Ryong Ha (Seoul, South Korea) and Yang Xu (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device comprising a substrate including first and second PMOSFET regions, first and second active patterns on the first...