US Patent Issued to SAMSUNG ELECTRONICS on Jan. 27 for "Nonvolatile memory devices having magnetic tunnel junction memory cells therein" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,496, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Nonvolatile memory devices having magnetic tunnel junction memory cells therein" was invented by Kil Ho Lee (Hwaseong-si, South Korea), Gwan Hyeob Koh (Seoul, South Korea), Yong Jae Kim (Seongnam-si, South Korea) and Geon Hee Bae (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a substrate having a first mold insulating film on a first region thereof, and a first structure on the substrate. The first structure includes a lower electrode, a magnetic tunnel junction (MTJ) structure on the lower electrode...