ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,536,066, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Nonvolatile memory" was invented by Hwasuk Cho (Suwon-si, South Korea), Seungwoo Yu (Suwon-si, South Korea) and Byungkwan Chun (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device includes a plurality of latch groups, an address controller, an encoder, and a buffer. The address controller controls an input address and an output address to indicate one of the plurality of latch groups. The encoder receives sector data from a latch group corresponding to the output address among the plurality of latch groups and a...