US Patent Issued to SAMSUNG ELECTRONICS on Jan. 27 for "Memory devices having built-in power supporting control circuits that provide increased program and read reliability" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,058, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).

"Memory devices having built-in power supporting control circuits that provide increased program and read reliability" was invented by Kwanghoe Heo (Suwon-si, South Korea), Seongjin Kim (Suwon-si, South Korea) and Sang-Wan Nam (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of nonvolatile memory cells and a wordline voltage generator configured to drive: a selected word line within the array with a program voltage, a word line extending immediately adjacent the selected word line with a first voltage d...