US Patent Issued to SAMSUNG ELECTRONICS on Jan. 27 for "Memory cell array including partitioned dual line structure and design method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,032, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory cell array including partitioned dual line structure and design method thereof" was invented by Inhak Lee (Suwon-si, South Korea), Jaesung Choi (Suwon-si, South Korea) and Sangyeop Baeck (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes is provided. The integrated circuit includes: a plurality of bit lines spaced apart from each other along a first direction and extending in a second direction perpendicular to the first direction through a first sub-array and a second sub-array neighboring the first...