ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,043, issued on Jan. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Embedded memory device, integrated circuit having the same and method of operating the same" was invented by Kiryong Kim (Suwon-si, South Korea), Jungmyung Kang (Suwon-si, South Korea), Inhak Lee (Suwon-si, South Korea), Jaesung Choi (Suwon-si, South Korea), Jeonseung Kang (Suwon-si, South Korea), Duhwi Kim (Suwon-si, South Korea) and Jaeyoung Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embedded memory device includes a retention voltage supply circuit outputting a retention voltage in response to a retention activation sig...