US Patent Issued to SAMSUNG ELECTRONICS on Jan. 20 for "Three-dimensional (3D) semiconductor memory device including a separation structure and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,465, issued on Jan. 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Three-dimensional (3D) semiconductor memory device including a separation structure and electronic system including the same" was invented by Sung-Min Hwang (Hwaseong-si, South Korea), Jae-Joo Shim (Suwon-si, South Korea), Dong-Sik Lee (Hwaseong-si, South Korea) and Bongtae Park (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor memory device includes a substrate, a stack structure comprising interlayer dielectric layers and gate electrodes alternately and repeatedly stacked on the substrate, vertical channel structure...