US Patent Issued to SAMSUNG ELECTRONICS on Jan. 20 for "Three-dimensional (3D) semiconductor memory device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,477, issued on Jan. 20, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Three-dimensional (3D) semiconductor memory device and method of manufacturing the same" was invented by Jeon Il Lee (Suwon-si, South Korea) and Min Hee Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor memory device includes a first through-structure on a substrate, the first through-structure comprising first and second conductive pillars spaced apart from each other in a first direction, an electrode adjacent to the first through-structure, the electrode horizontally extending in the first direction, and a ferr...